Features
•
Fast Read Access Time - 120 ns
•
Automatic Page Write Operation
– Internal Address and Data Latches for 128-Bytes
– Internal Control Timer
Fast Write Cycle Time
– Page Write Cycle Time - 10 ms Maximum
– 1 to 128-Byte Page Write Operation
Low Power Dissipation
– 80 mA Active Current
– 300 µA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
– Endurance: 10
4
or 10
5
Cycles
– Data Retention: 10 Years
Single 5V
±
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
•
AT28C010 Mil
•
•
•
•
1-Megabit
(128K x 8)
Paged Parallel
EEPROMs
AT28C010
Military
(continued)
32 LCC
Top View
A12
A15
A16
NC
VCC
WE
NC
4
3
2
1
32
31
30
•
•
•
Pin Configuration
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
44 LCC
Top View
A15
A16
NC
NC
NC
NC
VCC
WE
NC
NC
A14
CERDIP, FLATPACK
Top View
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
A0
I/O0
I/O1
I/O2
VSS
NC
I/O3
I/O4
I/O5
I/O6
I/O7
18
19
20
21
22
23
24
25
26
27
28
A12
A7
A6
A5
NC
NC
NC
A4
A3
A2
A1
7
8
9
10
11
12
13
14
15
16
17
6
5
4
3
2
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
A13
A8
A9
A11
NC
NC
NC
NC
OE
A10
CE
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
14
15
16
17
18
19
20
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
PGA
Top View
0010D–PEEPR–7/09