AT28C010 Military
DC Characteristics (Continued)
Symbol
V
IH
V
OL
V
OH1
V
OH2
Parameter
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage CMOS
I
OL
= 2.1 mA
I
OH
= -400
μA
I
OH
= -100
μA;
V
CC
= 4.5V
2.4
4,2
Condition
Min
2.0
0.45
Max
Units
V
V
V
V
AC Read Characteristics
AT28C010-12
Symbol
t
ACC
t
CE (1)
t
OE (2)
t
DF (3, 4)
t
OH
Parameter
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE to Output Float
Output Hold from OE, CE or
Address, whichever occurred
first
CE Pulse High Time
0
0
0
Min
Max
120
120
50
50
0
0
0
AT28C010-15
Min
Max
150
150
55
55
0
0
0
AT28C010-20
Min
Max
200
200
55
55
0
0
0
AT28C010-25
Min
Max
250
250
55
55
Units
ns
ns
ns
ns
ns
t
CEPH(5)
50
50
50
50
ns
AC Read Waveforms
Notes:
1. CE may be delayed up to t
ACC
- t
CE
after the address transition without impact on t
ACC
.
2. OE may be delayed up to t
CE
- t
OE
after the falling edge of CE without impact on t
CE
or by t
ACC
- t
OE
after an address change without impact in t
ACC
.
3. t
DF
is specified from OE or CE wichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
5. If CE is de-asserted, it must remain de-asserted for at least 50ns during read operations other-
wise incorrect data may be read.
5
0010D–PEEPR–7/09