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45DB041B 参数 Datasheet PDF下载

45DB041B图片预览
型号: 45DB041B
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位2.5伏,只有2.7伏,只有数据闪存 [4-megabit 2.5-volt Only or 2.7-volt Only DataFlash]
分类和应用: 闪存
文件页数/大小: 33 页 / 231 K
品牌: ATMEL [ ATMEL ]
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AT45DB041B  
Memory Architecture Diagram  
SECTOR ARCHITECTURE  
BLOCK ARCHITECTURE  
PAGE ARCHITECTURE  
SECTOR 0 = 8 Pages  
2112 bytes (2K + 64)  
BLOCK 0  
BLOCK 1  
BLOCK 2  
8 Pages  
PAGE 0  
PAGE 1  
SECTOR 0  
SECTOR 1 = 248 Pages  
65,472 bytes (62K + 1984)  
PAGE 6  
PAGE 7  
PAGE 8  
PAGE 9  
SECTOR 2 = 256 Pages  
67,584 bytes (64K + 2K)  
BLOCK 30  
BLOCK 31  
BLOCK 32  
BLOCK 33  
SECTOR 3 = 512 Pages  
135,168 bytes (128K + 4K)  
PAGE 14  
PAGE 15  
PAGE 16  
PAGE 17  
PAGE 18  
BLOCK 62  
BLOCK 63  
BLOCK 64  
BLOCK 65  
SECTOR 4 = 512 Pages  
135,168 bytes (128K + 4K)  
SECTOR 5 = 512 Pages  
135,168 bytes (128K + 4K)  
PAGE 2045  
PAGE 2046  
PAGE 2047  
BLOCK 254  
BLOCK 255  
Block = 2112 bytes  
(2K + 64)  
Page = 264 bytes  
(256 + 8)  
Device Operation  
The device operation is controlled by instructions from the host processor. The list of  
instructions and their associated opcodes are contained in Tables 1 through 4. A valid  
instruction starts with the falling edge of CS followed by the appropriate 8-bit opcode  
and the desired buffer or main memory address location. While the CS pin is low, tog-  
gling the SCK pin controls the loading of the opcode and the desired buffer or main  
memory address location through the SI (serial input) pin. All instructions, addresses  
and data are transferred with the most significant bit (MSB) first.  
Buffer addressing is referenced in the datasheet using the terminology BFA8 - BFA0 to  
denote the nine address bits required to designate a byte address within a buffer. Main  
memory addressing is referenced using the terminology PA10 - PA0 and BA8 - BA0  
where PA10 - PA0 denotes the 11 address bits required to designate a page address  
and BA8 - BA0 denotes the nine address bits required to designate a byte address  
within the page.  
Read Commands  
By specifying the appropriate opcode, data can be read from the main memory or from  
either one of the two data buffers. The DataFlash supports two categories of read  
modes in relation to the SCK signal. The differences between the modes are in respect  
to the inactive state of the SCK signal as well as which clock cycle data will begin to be  
output. The two categories, which are comprised of four modes total, are defined as  
Inactive Clock Polarity Low or Inactive Clock Polarity High and SPI Mode 0 or SPI  
Mode 3. A separate opcode (refer to Table 1 on page 10 for a complete list) is used to  
select which category will be used for reading. Please refer to the “Detailed Bit-level  
Read Timing” diagrams in this datasheet for details on the clock cycle sequences for  
each mode.  
CONTINUOUS ARRAY READ: By supplying an initial starting address for the main  
memory array, the Continuous Array Read command can be utilized to sequentially  
read a continuous stream of data from the device by simply providing a clock signal; no  
additional addressing information or control signals need to be provided. The DataFlash  
incorporates an internal address counter that will automatically increment on every clock  
3
1938F–DFLSH–10/02  
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