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45DB041B 参数 Datasheet PDF下载

45DB041B图片预览
型号: 45DB041B
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位2.5伏,只有2.7伏,只有数据闪存 [4-megabit 2.5-volt Only or 2.7-volt Only DataFlash]
分类和应用: 闪存
文件页数/大小: 33 页 / 231 K
品牌: ATMEL [ ATMEL ]
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contained three step Read-Modify-Write operation. Unlike conventional Flash memories  
that are accessed randomly with multiple address lines and a parallel interface, the  
DataFlash uses a SPI serial interface to sequentially access its data. DataFlash sup-  
ports SPI mode 0 and mode 3. The simple serial interface facilitates hardware layout,  
increases system reliability, minimizes switching noise, and reduces package size and  
active pin count. The device is optimized for use in many commercial and industrial  
applications where high density, low pin count, low voltage, and low power are essential.  
The device operates at clock frequencies up to 20 MHz with a typical active read current  
consumption of 4 mA.  
To allow for simple in-system reprogrammability, the AT45DB041B does not require  
high input voltages for programming. The device operates from a single power supply,  
2.5V to 3.6V or 2.7V to 3.6V, for both the program and read operations. The  
AT45DB041B is enabled through the chip select pin (CS) and accessed via a three-wire  
interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock  
(SCK).  
All programming cycles are self-timed, and no separate erase cycle is required before  
programming.  
When the device is shipped from Atmel, the most significant page of the memory array  
may not be erased. In other words, the contents of the last page may not be filled with  
FFH.  
Block Diagram  
WP  
FLASH MEMORY ARRAY  
PAGE (264 BYTES)  
BUFFER 1 (264 BYTES)  
BUFFER 2 (264 BYTES)  
SCK  
CS  
I/O INTERFACE  
RESET  
VCC  
GND  
RDY/BUSY  
SI  
SO  
Memory Array  
To provide optimal flexibility, the memory array of the AT45DB041B is divided into three  
levels of granularity comprising of sectors, blocks, and pages. The Memory Architecture  
Diagram illustrates the breakdown of each level and details the number of pages per  
sector and block. All program operations to the DataFlash occur on a page-by-page  
basis; however, the optional erase operations can be performed at the block or page  
level.  
2
AT45DB041B  
1938F–DFLSH–10/02  
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