NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The
2N918
is Designed for High
Frequency Low Noise Amplifier and
Oscillator Applications.
PACKAGE STYLE TO-72
MAXIMUM RATINGS
I
C
V
CE
P
DISS
T
J
T
STG
50 mA
15 V
300 mW @ T
C
= 25 C
200 mW @ T
C
= 25 C
-65 C to +200 C
-65 C to +200 C
O
O
O
O
O
O
1 = EMITTER
2 = BASE
3 = COLLECTOR
4 = CASE
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
I
CBO
BV
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
f
t
C
ob
C
ib
N
F
G
pe
P
out
η
T
C
= 25 C
O
NONE
TEST CONDITIONS
I
C
= 3.0 mA
I
C
= 1.0
µA
V
CB
= 15 V
V
CB
= 15 V
I
E
= 10
µA
V
CE
= 1.0 V
I
C
= 10 mA
I
C
= 10 mA
V
CE
= 10 V
V
CB
= 0 V
V
CB
= 10 V
V
EB
= 0.5 V
V
CE
= 6.0 V
V
CB
= 12 V
V
CB
= 15 V
I
C
= 1.0 mA
I
C
= 6.0 mA
I
C
= 8.0 mA
I
C
= 3.0 mA
I
B
= 1.0 mA
I
B
= 1.0 mA
I
C
= 4.0 mA
f = 100 MHz
f = 140 KHz
f = 140 KHz
f = 140 KHz
f = 60 MHz
f = 200 MHz
f = 500 MHz
T
A
= 150 C
O
MINIMUM TYPICAL MAXIMUM
15
30
0.01
1.0
3.0
20
0.4
1.0
600
3.0
1.7
2.0
6.0
15
30
25
UNITS
V
V
µ
A
V
---
V
V
MHz
pF
pF
dB
dB
mW
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
