2N918
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N918 is Designed for High
Frequency Low Noise Amplifier and
Oscillator Applications.
PACKAGE STYLE TO-72
MAXIMUM RATINGS
50 mA
IC
15 V
VCE
300 mW @ TC = 25 OC
200 mW @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
PDISS
TJ
1 = EMITTER
2 = BASE
3 = COLLECTOR
4 = CASE
TSTG
CHARACTERISTICS TC = 25 O
C
NONE
SYMBOL
BVCEO
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 3.0 mA
15
30
V
V
BVCBO
IC = 1.0 µA
VCB = 15 V
0.01
1.0
ICBO
µA
VCB = 15 V
TA = 150 OC
BVEBO
hFE
3.0
20
V
---
V
IE = 10 µA
VCE = 1.0 V
IC = 10 mA
IC = 10 mA
IC = 3.0 mA
IB = 1.0 mA
IB = 1.0 mA
VCE(SAT)
VBE(SAT)
0.4
1.0
V
ft
VCE = 10 V
VCB = 0 V
IC = 4.0 mA
f = 100 MHz
f = 140 KHz
f = 140 KHz
600
MHz
pF
3.0
1.7
Cob
Cib
VCB = 10 V
VEB = 0.5 V
f = 140 KHz
2.0
pF
NF
VCE = 6.0 V
VCB = 12 V
IC = 1.0 mA
IC = 6.0 mA
f = 60 MHz
6.0
dB
dB
Gpe
f = 200 MHz
15
Pout
30
25
mW
%
VCB = 15 V
IC = 8.0 mA
f = 500 MHz
η
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]