PB5006 thru PB5010
General Semiconductor
120
100
80
60
40
20
0
1000
100
10
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 85 °C
1
TA = 25 °C
0.1
0.01
0
5
10 15 20 25 30 35 40 45 50 55
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Forward Power Dissipation
Figure 5. Typical Reverse Characteristics Per Diode
100
10
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 125 °C
TA = 100 °C
100
TA = 25 °C
1
TA = 85 °C
10
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 4. Typical Forward Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
ASEMI [ ASEMI ]
