PB5006 thru PB5010
General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous forward
voltage per diode (1)
T
T
A = 25 °C
A = 125 °C
1.00
0.90
1.10
1.00
IF = 22.5 A
VF
V
TA = 25 °C
TA = 125 °C
-
10
500
Reverse current per diode (2)
rated VR
IR
µA
pF
170
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
162
-
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: 10 ms pulse width
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
PB5006
PB5008
PB5010
UNIT
(1)
RJC
RJA
0.7
18
Typical thermal resistance
°C/W
(2)
Notes
(1) With heatsink
(2) Without heatsink, free air
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
PB5006-E3/45
7.62
45
20
Tube
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
50
5
4
3
2
1
0
45
40
35
30
25
20
15
10
5
With Heatsink
Sine-Wave, R-Load
TC Measurement
Without Heatsink
Sine-Wave, R-Load
Free Air, TA
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
Case Temperature (°C)
Ambient Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
Figure 2. Forward Current Derating Curve
ASEMI [ ASEMI ]
