AWB31D9
2.3 Pin Configuration
Pin
1, 4
2
Description
RF_IN
Simplified Outline
Current Adjustable
VCG Adjustable
RF_ OUT
1
2
3
4
8
7
6
5
7
Bias
5, 8
3, 6
Circuit
NC or GND
Note: Backside metal paddle is RF and DC ground.
2.4 Absolute Maximum Ratings
Parameters
Max. Ratings
-40 to 85 C
-40 to 150 C
+9 V
Operation Case Temperature
Storage Temperature
Device Voltage
Maximum Current
450 mA
Operation Junction Temperature
Input RF Power (CW, 75 matched)
+150 C
+25 dBm
2.5 Thermal Resistance
Symbol
Rth
Description
Thermal resistance from junction to lead
Typ
17
Unit
C/W
2.6 ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
MM
Class 1B
Class A
Voltage Level: 750 V
Voltage Level: 100 V
CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control techniques should be used when handling
these devices.
Moisture Sensitivity Level
MSL 3 at 260 C reflow
3/21
ASB Inc.
sales@asb.co.kr
June 2017
ASB [ ADVANCED SEMICONDUCTOR BUSINESS INC. ]
