AST163
High Gain, Low Noise Amplifier
Parameter
Symbol
G
p
NF
RL
in
RL
out
P
o(1dB)
OIP3
I
cc
Unit
dB
dB
dB
dB
dBm
dBm
mA
Frequency [MHz]
1950
16
0.65
-10
-14
16
29
25
APPLICATION CIRCUIT
1950 MHz
+5 V / 25 mA
Power Gain
Noise Figure
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
Schematic
VDD
Board Layout (FR4, 23x13 mm
2
, 0.8T)
Top
R1=750
W
C4=10 nF
R3=39
W
C6=1 uF
R2=6.2 kW
L1=5.6 nH
RF IN
C1=100 pF
AST163
*P1
*P1
C5=10 nF
L2=3.3 nH
C2=2.2 pF
RF OUT
C3=0.5 pF
Bottom
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 1.2 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
20
0
15
-5
Gain (dB)
10
S11 (dB)
1800
1900
2000
2100
2200
2300
-10
5
-15
0
1700
-20
1700
1800
1900
2000
2100
2200
2300
Frequency (MHz)
0
5
Frequency (MHz)
-5
4
Stability Factor
1800
1900
2000
2100
2200
2300
3
S22 (dB)
-10
2
-15
1
-20
1700
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
8/8
ASB Inc.
·
sales@asb.co.kr
·
Tel: +82-42-528-7223
July 2010
ASB [ ADVANCED SEMICONDUCTOR BUSINESS INC. ]
