AST163
High Gain, Low Noise Amplifier
Parameter
Symbol
G
p
NF
RL
in
RL
out
P
o(1dB)
OIP3
I
cc
Unit
dB
dB
dB
dB
dBm
dBm
mA
Frequency [MHz]
1710~1880
17.5
0.65
-10
-8
16.5
28
35
APPLICATION CIRCUIT
1710 ~ 1880 MHz
+5 V / 35 mA
Power Gain
Noise Figure
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
Schematic
VDD
Board Layout (FR4, 23x13 mm
2
, 0.8T)
Top
R1=750
W
C3=10 nF
R3=30
W
C4=1 uF
R2=5.1 kW
L1=4.7 nH
RF IN
C1=100 pF
AST163
*P1
*P1
L2=8.2 nH
C2=100 pF
RF OUT
Bottom
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 0.4 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
25
0
20
-5
Gain (dB)
15
S11 (dB)
1600
1700
1800
1900
2000
2100
-10
10
-15
5
0
1500
-20
1500
1600
1700
1800
1900
2000
2100
Frequency (MHz)
0
5
Frequency (MHz)
-5
4
Stability Factor
1600
1700
1800
1900
2000
2100
3
S22 (dB)
-10
2
-15
1
-20
1500
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
7/8
ASB Inc.
·
sales@asb.co.kr
·
Tel: +82-42-528-7223
July 2010
ASB [ ADVANCED SEMICONDUCTOR BUSINESS INC. ]
