ASL51S9
2.4 Absolute Maximum Ratings
Parameters
Max. Ratings
-40 to 85 C
-40 to 150 C
+5.5 V
Operation Case Temperature
Storage Temperature
Device Voltage
Operation Junction Temperature
Input RF Power (CW, 50 matched)
+150 C
+25 dBm
2.5 Thermal Resistance
Symbol
Rth
Description
Thermal resistance from junction to lead
Typ
110
Unit
C/W
2.6 ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
MM
Class 1A
Class A
Voltage Level: 400 V
Voltage Level: 50 V
CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control techniques should be used when handling
these devices.
Moisture Sensitivity Level
MSL 3 at 260 C reflow
(Intentionally Blanked)
3/8
ASB Inc.
sales@asb.co.kr
January 2017
ASB [ ADVANCED SEMICONDUCTOR BUSINESS INC. ]
