CR100-8
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
140
10
1
Max. Allowable Case Temperature [ C]
120
100
80
60
V
GM
(5V)
P
GM
(2W)
Gate Voltage [V]
o
θ
= 180
o
P
G(AV)
(0.1W)
I
GM
(1A)
10
0
π
θ
2
π
25 C
o
40
360°
V
GD
(0.2V)
10
-1
20
0
0.0
θ
: Conduction Angl e
10
0
10
1
10
2
10
3
10
4
0.1
0.2
0.3
0.4
0.5
0.6
Gate Current [mA]
Average On-State Current [A]
Fig 3. Typical Forward Voltage
10
1
Fig 4. Thermal Response
10
3
Transient Thermal Impedance [ C/W]
o
On-State Current [A]
10
2
R
θ
(J-C)
10
0
125 C
o
10
1
25 C
-1
o
10
0.5
1.0
1.5
2.0
2.5
10
0
On-State Voltage [V]
10
-2
10
-1
10
0
10
1
10
2
10
3
Time (sec)
Fig 5. Typical Gate Trigger Voltage vs.
10
10
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
V
GT
(t C)
V
GT
(25
o
C)
1
0.1
-50
0
50
100
o
150
I
GT
(25 C)
I
GT
(t C)
o
o
1
0.1
-50
0
50
100
o
150
Junction Temperature[ C]
Junction Temperature[ C]
3/5
APOLLOELECTRON [ Apollo Electron Co., Ltd. ]
