CR100-8
Electrical Characteristics
Symbol
Items
( T
j
= 25 °C unless otherwise noted )
Conditions
V
AK
= V
DRM
or V
RRM ;
R
GK
= 1000
Ω
T
C
= 25 °C
T
C
= 110°C
( I
TM
= 1 A, Peak )
V
AK
=
12
V, R
L
=100
Ω
Ratings
Min.
Typ.
Max.
10
100
1.7
Unit
I
DRM
V
TM
I
GT
Repetitive Peak Off-State
Current
Peak On-State Voltage (1)
─
─
─
─
─
1.3
㎂
V
Gate Trigger Current (2)
─
--
200
㎂
V
GT
V
GD
Gate Trigger Voltage (2)
V
D
=12 V, R
L
=100
Ω
--
--
0.8
V
Non-Trigger Gate Voltage (1)
Critical Rate of Rise Off-State
Voltage
Critical Rate of Rise On-State
Voltage
V
AK
= 12 V, R
L
=100
Ω
T
j
= 125 °C
0.2
─
─
V
dv/dt
10
--
--
v/
㎲
di/dt
I
TM
= 2A ; I
g
= 10mA
V
AK
= 12 V, Gate Open
Initiating Curent = 20mA
─
─
50
A/㎲
I
H
Holding Current
---
0.8
10
mA
R
th(j-c)
R
th(j-a)
Thermal Impedance
Thermal Impedance
Junction to case
Junction to Ambient
─
─
─
─
60
150
°C/W
°C/W
2/5
APOLLOELECTRON [ Apollo Electron Co., Ltd. ]
