TF6A60
Fig 1. Gate Characteristics
10
2
Fig 2. On-State Voltage
10
1
V
GM
(10V)
On-State Current [A]
Gate Voltage [V]
P
GM
(5W)
P
G(AV)
(1W)
25
℃
10
10
1
T
J
= 125 C
o
I
GM
(2A)
0
T
J
= 25 C
10
0
o
10
-1
V
GD
(0.2V)
1
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
10
9
130
Fig 4. On State Current vs.
Allowable Case Temperature
Allowable Case Temperature [
o
C]
Power Dissipation [W]
8
7
6
5
4
3
2
1
0
0
1
π
θ
360°
θ
2
π
θ
= 180
o
θ
= 150
θ
= 120
θ
= 90
o
o
o
o
o
120
θ
: Conduction Angle
θ
= 60
θ
= 30
110
π
θ
100
360°
θ
θ
= 30
2
π
o
o
o
o
o
θ
= 60
θ
= 90
θ
= 120
θ
: Conduction Angle
90
θ
= 150
o
θ
= 180
4
5
6
7
8
2
3
4
5
6
7
8
0
1
2
3
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
80
70
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
Surge On-State Current [A]
60
60Hz
40
30
20
10
0
0
10
V
GT
(25 C)
V
GT
(t C)
50
V
_
GT3
o
o
1
50Hz
V
V
+
GT1
_
GT1
10
1
10
2
0.1
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/6
APOLLOELECTRON [ Apollo Electron Co., Ltd. ]
