TF6A60
Electrical Characteristics(Tj=25 °C unless otherwise specified)
Ratings
Typ.
Symbol
Items
Conditions
Unit
Min.
Max.
V
D = VDRM, Single Phase, Half Wave
Repetitive Peak Off-State
Current
IDRM
Tj = 125 °C
---
---
1.0
mA
V
VTM
ITM = 8.5A, tp=380㎲
Peak On-State Voltage
1.55
25
─
─
─
─
─
─
─
0.2
─
─
─
─
─
─
─
I+
Ⅰ
GT1
I -
V
V
D =12 V, RL=30 Ω
Gate Trigger Current
25
mA
Ⅱ
GT1
I -
25
Ⅲ
Ⅰ
GT3
V+
1.5
1.5
1.5
GT1
V-GT1
D = 12 V, RL=30 Ω
Gate Trigger Voltage
V
Ⅱ
V-GT3
VGD
Ⅲ
TJ = 125 °C, VD =VDRM, RL=3.3kΩ
Non-Trigger Gate Voltage
V
TJ = 125 °C,
VD=2/3 VDRM
Critical Rate of Rise Off-State
Voltage
dv/dt
IH
200
V/㎲
Holding Current
I =0.2A
T
mA
35
2/6
APOLLOELECTRON [ Apollo Electron Co., Ltd. ]
