CS1615/16
3.2 Thermal Resistance
Symbol
Parameter
Junction-to-Ambient Thermal Impedance
Junction-to-Case Thermal Impedance
2 Layer PCB
4 Layer PCB
2 Layer PCB
4 Layer PCB
SOIC
119
105
50
44
TSSOP
138
103
44
28
Unit
°C/W
°C/W
°C/W
°C/W
JA
JC
3.3 Absolute Maximum Ratings
Characteristics conditions:
All voltages are measured with respect to GND.
Pin
14
2,8,9,
10,11,16
2,8,9,
10,11,16
13
13
5
3
-
-
-
All Pins
V
GD
I
GD
I
CLAMP
P
D
T
J
T
Stg
ESD
Symbol
V
DD
IC Supply Voltage
Analog Input Maximum Voltage
Analog Input Maximum Current
Gate Drive Output Voltage
Gate Drive Output Current
Clamp Output Current
Total Power Dissipation
Junction Temperature Operating Range
Storage Temperature Range
Electrostatic Discharge Capability
Human Body Model
Charged Device Model
Parameter
Value
18.5
-0.5 to (V
DD
+0.5)
5
-0.3 to (V
DD
+0.3)
-1.0 / +0.5
1.1
15
400
-40 to +125
-65 to +150
2000
500
Unit
V
V
mA
V
A
A
mA
mW
°C
°C
V
V
I
SOURCE
Current into Pin
Note:
8.
Long-term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation at
the rate of 50 mW /°C for variation over temperature.
WARNING:
Operation at or beyond these limits may result in permanent damage to the device.
Normal operation is not guaranteed at these extremes.
6
DS961F1