AON6407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
TA=25°C
TA=100°C
80
60
40
20
0
100
10
1
TA=150°C
TA=125°C
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
80
60
40
20
0
10000
1000
100
10
TA=25°C
17
5
2
10
1
0.0001
0.01
1
100
10000
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
18
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
40
1
RθJA=55°C/W
IAS
EAS
0.1
0.01
PD
Ton
T
Single Pulse
0.001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Oct. 2011
www.aosmd.com
Page 5 of 6
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
