AON6407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
5000
VDS=-15V
ID=-20A
4000
3000
2000
1000
0
Ciss
6
4
Coss
2
Crss
0
0
10
20
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
50
60
70
80
0
5
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
400
350
300
250
200
150
100
50
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
10µs
RDS(ON)
limited
100µs
17
5
2
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
10
0.1
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
0
-VDS (Volts)
Pulse Width (s)
18
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
IAS
EAS
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Oct. 2011
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AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
