AOD478/AOI478
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
50
TA=25°C
TA=100°C
40
TA=150°C
10
30
TA=125°C
20
10
0
1
1
10
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
100
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
125
150
175
10000
1000
100
10
15
12
9
TA=25°C
17
5
2
6
10
3
1
0
0
18
0.00001
0.001
0.1
10
1000
0
25
50
75
TCASE (°C)
100
125
150
175
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: Nov. 2011
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AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
