AOD478/AOI478
100V N-Channel MOSFET
General Description
Product Summary
VDS
100V
The AOD478/AOI478 combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON). This device is ideal for
boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
11A
< 140mΩ
< 152mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
TO251A
IPAK
D
Top View
Bottom View
Bottom View
Top View
D
D
G
S
G
G
S
S
D
D
S
S
G
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
100
V
V
Gate-Source Voltage
VGS
±20
TC=25°C
11
Continuous Drain
Current
Pulsed Drain Current C
ID
TC=100°C
A
8
IDM
24
TA=25°C
TA=70°C
2.5
Continuous Drain
Current
IDSM
A
2
Avalanche Current C
IAS, IAR
10
A
Avalanche energy L=0.1mH C
EAS, EAR
5
45
mJ
TC=25°C
Power Dissipation B
TC=100°C
PD
W
23
TA=25°C
2.1
PDSM
W
°C
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
17
Max
25
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
55
60
RθJC
2.7
3.3
Rev 1: Nov. 2011
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AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
