AOB11N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=480V
I
D
=11A
1000
Capacitance (pF)
V
GS
(Volts)
9
C
oss
100
10000
C
iss
12
6
10
3
C
rss
1
0
20
30
40
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
50
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
0
100
10µs
Current rating I
D
(A)
10
I
D
(Amps)
R
DS(ON)
limited
100µs
1
DC
0.1
T
J(Max)
=150°C
T
C
=25°C
1ms
12
10
8
6
4
2
0
1
10
100
1000
0
25
50
75
100
125
150
T
CASE
(°
C)
Figure 10: Current De-rating (Note B)
0.01
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOB11N60 (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.46°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
T
Single Pulse
0.01
0.001
0.000001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOB11N60(Note F)
0.00001
0.0001
1
10
Rev0: Jan 2012
www.aosmd.com
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