AOB11N60
600V,11A N-Channel MOSFET
General Description
The AOB11N60 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.By providing low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche capability this device
can be adopted quickly into new and existing offline power
supply designs.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
700V@150℃
11A
< 0.7Ω
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOB11N60L
TO-263
D
2
PAK
D
D
S
G
AOB11N60
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOB11N60
600
±30
11
8.0
39
4.8
345
690
5
272
2.2
-55 to 150
300
AOB11N60
65
0.5
0.46
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°
C
°
C
Units
°
C/W
°
C/W
°
C/W
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
R
θJC
Repetitive avalanche energy
Single plused avalanche energy
Peak diode recovery dv/dt
T
C
=25°
C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
Maximum Case-to-sink
A
Maximum Junction-to-Case
Rev 0: Jan 2012
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