AO8846
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
1
0
0
2
4
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
= 10V
I
D
= 7A
1800
1600
1400
Capacitance (pF)
1200
1000
800
600
400
200
0
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
C
rss
C
iss
100
10µs
10
I
D
(Amps)
100µs
10000
1000
Power (W)
100
10
1
0.1
0.00001
T
J(Max)
=150°C
T
A
=25°C
1
R
DS(ON)
limited
1ms
10ms
100ms
10s
DC
0.1
T
J(Max)
=150°C
T
A
=25°C
0.1
1
0.01
I
F
=-6.5A, dI/dt=100A/µs
10
100
V
DS
(Volts)
0.001
0.1
10
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=120°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
D
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
T
on
0.01
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
