AO8846
Common-Drain Dual N-Channel Enhancement Mode
Field Effect Transistor
General Description
The AO8846 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge. It is ESD
protected. This device is suitable for use as a uni-
directional or bi-directional load switch, facilitated by its
common-drain configuration.
Standard Product AO8846
is Pb-free (meets ROHS & Sony 259 specifications).
Features
V
DS
= 20V
I
D
= 7.0A
(V
GS
= 4.5V)
R
DS(ON)
< 20mΩ (V
GS
= 4.5V)
R
DS(ON)
< 20mΩ (V
GS
= 4.0V)
R
DS(ON)
< 21mΩ (V
GS
= 3.1V)
R
DS(ON)
< 22mΩ (V
GS
= 2.5V)
R
DS(ON)
< 27mΩ (V
GS
= 1.8V)
TSSOP-8
Top View
D1/D2
S1
S1
G1
1
2
3
4
8
7
6
5
D1/D2
S2
S2
G2
G1
1.8KΩ
D1
D2
G2
1.8KΩ
S1
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
10 Sec
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
7
5.7
Steady State
20
±8
5.7
4.8
25
1.0
0.7
Units
V
V
A
1.5
1.0
-55 to 150
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
64
89
53
Max
83
120
70
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com