AO7410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
400
V
DS
=15V
I
D
=1.6A
Capacitance (pF)
350
300
250
200
150
100
50
0
0
0.5
1.5
2
2.5
3
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1
3.5
0
0
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
15
C
oss
C
rss
C
iss
4
V
GS
(Volts)
3
2
1
100.0
270
T
J(Max)
=150°C
T
A
=25°C
15
T
J(Max)
=150°C
T
A
=25°C
1.7
3.6
10.0
I
D
(Amps)
1.0
1s
10s
0.1
0.1
0.1s
100µs
1ms
DC
1
10ms
10
100
Power (W)
R
DS(ON)
limited
10µs
10
5
0
0.001
13
0.01
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=360°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
