AO7410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10V
12
3.5V
4V
6V
3V
6
I
D
(A)
10
V
DS
=5V
8
9
I
D
(A)
6
V
GS
=2.5V
3
4
125°C
2
25°C
0
0
2
3
4
V
DS
(Volts)
Fig 1: On-Region Characteristics
1
5
0
0
0.5
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
1
3.5
250
Normalized On-Resistance
V
GS
=2.5V
200
R
DS(ON)
(m
Ω
)
1.8
1.6
1.4
1.2
1
0.8
10
0
25
50
V
GS
=10V
I
D
=1.6A
270
1.7
150
V
GS
=4.5V
100
50
0
2
4
6
V
GS
=10V
8
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
180
I
D
=1.6A
160
140
120
100
80
60
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
I
S
(A)
125°C
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
1.0E+01
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
3
3.6
0.4
V
GS
=4.5V
1.2
I
D
=1.5A
V
GS
2.8
=2.5V
2.1
3
I
D
=1A
17.4
21
2.1
9.1
11
75
100
125
150
175
3.4
4
R
DS(ON)
(m
Ω
)
125°C
25°C
25°C
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.