AO7408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
4.5V
20
2.5V
15
I
D
(A)
2V
10
I
D
(A)
12
16
20
V
DS
=5V
8
125°C
5
V
GS
=1.5V
4
25°C
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
120
Normalized On-Resistance
0
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
V
GS
=2.5V
I
D
=1.8A
V
GS
=1.8V
17
I
D
=1A
5
V
GS
=4.5V
I
D
=2A
100
R
DS(ON)
(mΩ)
Ω
V
GS
=1.8V
80
V
GS
=2.5V
60
V
GS
=4.5V
0
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
2
4
1.4
1.2
1
2
10
40
0.8
0
25
50
75
100
125
150
175
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
120
I
D
=2A
1.0E+01
1.0E+00
100
R
DS(ON)
(mΩ)
Ω
I
S
(A)
40
1.0E-01
80
125°
1.0E-02
1.0E-03
125°
25°
60
1.0E-04
25°
40
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0
2
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 3: July 2010
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
