AO7408
20V N-Channel MOSFET
General Description
The AO7408 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with
gate voltages as low as 1.8V. This device is suitable for
use as a load switch or in PWM applications.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=2.5V)
R
DS(ON)
(at V
GS
=1.8V)
20V
2A
< 62mΩ
< 75mΩ
< 85mΩ
Top View
SC-70-6
(SOT-323)
Bottom View
Top View
D
D
D
1
2
3
6
5
4
D
D
G
S
G
S
Pin
1
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
Maximum
20
Units
V
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
±8
2
1.5
16
0.35
0.22
-55 to 150
V
A
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
300
340
280
Max
360
425
320
Units
°C/W
°C/W
°C/W
Rev 3: July 2010
www.aosmd.com
Page 1 of 5