AO7405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-1.4A
8
300
6
Capacitance (pF)
-V
GS
(Volts)
C
iss
400
200
4
100
2
C
rss
0
C
oss
0
0
3
4
5
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1
2
6
0
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
100.0
20
T
A
=25°
C
10.0
10µs
R
DS(ON)
limited
100µs
1ms
10ms
Power (W)
15
-I
D
(Amps)
1.0
10
0.1
T
J(Max)
=150°C
T
A
=25°C
0.1
1
5
DC
10
0.0
0.01
10s
100
0
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.001
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=425°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
T
on
T
Rev 3: April 2011
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
