AO7405
30V P-Channel MOSFET
General Description
The AO7405 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge, and
operation with gate voltages as low as 2.5V, in the
small SOT363 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
Product Summary
V
DS
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-4.5V)
R
DS(ON)
(at V
GS
=-2.5V)
-30V
-1.4A
< 115mΩ
< 140mΩ
< 200mΩ
SC70-6L
(SOT363)
Top View
Bottom View
D
D
G
Top View
1
2
3
6
5
4
D
D
S
G
D
S
Pin1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Maximum
-30
±12
-1.4
-1.0
-10
0.35
0.22
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
300
340
280
Max
360
425
320
Units
°
C/W
°
C/W
°
C/W
Rev 3: April 2011
www.aosmd.com
Page 1 of 5
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
