AO6601
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-2.3A
8
Capacitance (pF)
400
C
iss
300
500
-V
GS
(Volts)
6
4
200
C
oss
100
C
rss
0
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
2
0
0
3
4
5
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1
2
6
0
100.0
1000
T
A
=25°C
10.0
-I
D
(Amps)
100µs
1.0
1ms
10ms
0.1
Power (W)
R
DS(ON)
limited
10µs
100
10
T
J(Max)
=150°C
T
A
=25°C
0.01
0.1
DC
10s
0.0
1
-V
DS
(Volts)
10
100
1
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=150°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
Single Pulse
T
on
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
T
0.01
Rev 6: Dec. 2012
www.aosmd.com
Page 8 of 9
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
