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AO6409AL 参数 Datasheet PDF下载

AO6409AL图片预览
型号: AO6409AL
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强模式 [P-Channel Enhancement Mode]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 286 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO6409AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
I
D
(A)
20
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
80
70
R
DS(ON)
(m
)
60
50
40
30
20
0
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
2
4
V
GS
=-2.5V
V
GS
=-4.5V
Normalized On-Resistance
1.6
I
D
=-5.5A, V
GS
=-4.5V
1.4
I
D
=-5A, V
GS
=-2.5V
V
GS
=-1.8V
V
GS
=-1.5V
0
0
0.5
1
1.5
2
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
-2.0V
-2.5V
9
I
D
(A)
6
3
-8V
-4.5V
-3.0V
12
15
V
DS
=-5V
125°C
25°C
1.2
1
17
5
I
D
=-4A, V
GS
=-1.8V
2
10
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
120
I
D
=-5.5A
100
R
DS(ON)
(m
)
80
125°C
60
40
20
0
2
4
25°C
6
8
1.0E+01
1.0E+00
40
1.0E-01
I
S
(A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°C
25°C
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: January 2009
www.aosmd.com
Page 3 of 5