AO6409AL
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-20V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±8V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-5.5A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-2.5V, I
D
=-5A
V
GS
=-1.8V, I
D
=-4A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=-5V, I
D
=-5.5A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
620
V
GS
=0V, V
DS
=-10V, f=1MHz
80
50
7.4
V
GS
=-4.5V, V
DS
=-10V, I
D
=-5.5A
1.2
1
V
GS
=-4.5V, V
DS
=-10V, R
L
=1.8Ω,
R
GEN
=3Ω
I
F
=-5.5A, dI/dt=500A/µs
2
Min
-20
Typ
Max
Units
V
-1
-5
±10
-0.35
-30
36
51
44
53
20
-0.64
-1
-2
780
115
80
9.3
1.5
1.8
120
240
2.8
2
11
24
14
30
17
36
940
150
110
11
1.8
2.5
44
61
53
68
-0.57
-0.85
µA
µA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
µs
µs
ns
nC
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-5.5A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
Rev 0: January 2009
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: January 2009
www.aosmd.com
Page 2 of 5
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
