AO6408, AO6408L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2800
5
4
3
2
1
0
VDS=10V
ID=8.8A
2400
2000
1600
1200
800
400
0
Ciss
Coss
Crss
0
5
10
DS (Volts)
15
20
0
4
8
12
16
20
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1s
1s
TJ(Max)=150°C
TA=25°C
10s
DC
10
0.001
0.01
0.1
1
10
100
1000
0.1
0.1
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.