AO6408, AO6408L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
20
16
12
8
10V
4.5V
2.5V
2V
VDS=5V
30
20
10
0
125°C
4
25°C
1.5
VGS=1.5V
0
0
0.5
1
2
2.5
0
1
2
V
3
4
5
VGS(Volts)
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
40
1.6
VGS=2.5V,6A
VGS=4.5V, 8A
VGS=1.8V
30
20
10
0
1.4
1.2
1
VGS=2.5V
VGS=4.5V
VGS=1.8V, 4A
VGS=10V, 8.8A
VGS=10V
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
40
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=6A
125°C
30
20
10
0
125°C
25°C
25°C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
V
SD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.