AO6404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10
35
30
25
I
D
(A)
20
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
30
25
R
DS(ON)
(mΩ)
Ω
20
15
10
5
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Normalized On-Resistance
V
GS
=1.8V
V
GS
=1.5V
5
0
0
1
1.5
2
V
GS
(Volts)
Figure 2: Transfer Characteristics
0.5
2.5
25°C
I
D
(A)
20
15
10
125°C
2.5V
4.5V
2V
30
V
DS
=5V
25
1.6
I
D
=5A
1.4
V
GS
=4.5V
V
GS
=2.5V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
V
GS
=10V
1.2
V
GS
=1.8V
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
40
35
30
R
DS(ON)
(mΩ)
Ω
25
20
15
10
5
0
0
2
4
6
8
10
125°C
I
S
(A)
I
D
=5A
10
1
0.1
0.01
0.001
25°C
0.0001
0.00001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
