AO6404
20V N-Channel MOSFET
General Description
The AO6404 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
Product Summary
V
DS
(V) = 20V
I
D
= 8.6A (V
GS
= 10V)
R
DS(ON)
< 17mΩ (V
GS
= 10V)
R
DS(ON)
< 18mΩ (V
GS
= 4.5V)
R
DS(ON)
< 24mΩ (V
GS
= 2.5V)
R
DS(ON)
< 33mΩ (V
GS
= 1.8V)
ESD Rating: 2000V HBM
TSOP6
Top View
Bottom View
Top View
D
D
D
G
Pin1
1
2
3
6
5
4
D
D
S
S
G
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
20
±12
8.6
6.8
30
2
1.28
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
45
70
33
Max
62.5
110
50
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
