AO5600E
N-channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=20V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±4.5V
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=0.5A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=2.5V, I
D
=0.5A
V
GS
=1.8V, I
D
=0.3A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=5V, I
D
=0.5A
Diode Forward Voltage
I
S
=0.1A,V
GS
=0V
Maximum Body-Diode Continuous Current
0.45
3
0.54
0.81
0.63
0.73
1.5
0.65
1
0.4
35
V
GS
=0V, V
DS
=10V, f=1MHz
8
6
0.63
V
GS
=4.5V, V
DS
=10V, I
D
=0.5A
0.08
0.16
4.5
V
GS
=5V, V
DS
=10V, R
L
=50Ω,
R
GEN
=3Ω
I
F
=0.5A, dI/dt=100A/µs
3.3
70
35
8
2
10
1
45
0.65
1
0.75
0.95
0.6
Min
20
1
5
±1
±100
1
Typ
Max
Units
V
µΑ
µA
µA
V
A
Ω
Ω
Ω
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=0.5A, dI/dt=100A/µs
A: The value of R
is measured with the device in a still on 1in
2
FR-4 board with 2oz. Copper, in a dissipation P
DSM
and current rating I
DSM
A: The value of R
θJA
is measured with the device mountedair environment with T
A
=25°C. The power still air environment with T
A
=25°C. The are
θJA
based on T
J(MAX)
=150°C, using the steady the junction-to-ambient design. The current
value in any given application depends onstateuser's specific board thermal resistance. rating is based on the t
≤
10s thermal resistance
B. The
rating. power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where limited by junction temperature.
B: Repetitive rating, pulse width additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T lead =175°C.
C. The R
θJA
is the sum of the thermal impedence from junction to
J(MAX)
R
θJL
and lead to ambient.
D. The R
θJA
characteristics in Figures 1 to 6,12,14 are obtained case R
θJC
µs
case to ambient.
D. The staticis the sum of the thermal impedence from junction tousing <300 andpulses, duty cycle 0.5% max.
E. The static characteristics in Figures 1 to 6 mounted on using <300
µs
pulses, duty cycle 0.5% still
E. These tests are performed with the device are obtained 1 in
2
FR-4 board with 2oz. Copper, in amax.air environment with T
A
=25°C. The SOA
F. These curves single pulse rating.
curve provides a are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a The maximum current rating is limited by bond-wires
F. maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
2
G. These 2008
Rev5: Oct tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. The maximum current rating is limited by bond-wires.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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