AO5600E
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO5600E/L uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be used
in H-bridge, Inverters and other
applications.AO5600E and AO5600EL are electrically
identical.
-RoHS compliant
-AO5600EL is Halogen Free
ESD PROTECTED!
Features
n-channel
V
DS
(V) = 20V,
R
DS(ON)
< 0.65Ω
R
DS(ON)
< 0.75Ω
R
DS(ON)
< 0.95Ω
p-channel
V
DS
(V) = -20V,
R
DS(ON)
< 0.8Ω
R
DS(ON)
< 1.0Ω
R
DS(ON)
< 1.3Ω
I
D
= 0.6A (V
GS
=4.5V)
(V
GS
= 4.5V)
(V
GS
= 2.5V)
(V
GS
= 1.8V)
I
D
= -0.5A (V
GS
=-4.5V)
(V
GS
= -4.5V)
(V
GS
= -2.5V)
(V
GS
= -1.8V)
D1
1
D2
S1
G1
D2
SC-89-6
D1
G2
S2
G1
G2
S1
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V
DS
20
Gate-Source Voltage
Continuous Drain
B,H
Current
Pulsed Drain Current
Power Dissipation
B
Max p-channel
-20
±8
-0.5
-0.38
-1
0.38
0.24
Units
V
V
A
V
GS
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
P
D
T
J
, T
STG
0.6
0.4
3
0.38
0.24
W
°C
Junction and Storage Temperature Range
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
275
360
300
275
360
300
Max
330
450
350
330
450
350
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
