AO4940
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
200
0
0
5
10
15
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
10
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
C
rss
V
DS
=15V
I
D
=9.1A
Capacitance (pF)
1400
1200
1000
800
600
400
C
oss
C
iss
DYNAMIC PARAMETERS
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
T
J(Max)
=150°C
T
A
=25°C
DC
R
DS(ON)
limited
10µs
Power (W)
100µs
1ms
10ms
0.1s
1s
10s
100
T
J(Max)
=150°C
T
A
=25°C
80
60
40
20
0
0.0001
0.1
1
10
100
Pulse Width (s)
Figure10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.001
0.01
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
P
D
T
on
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
T
100
1000
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
