AO4940
Asymmetric Dual N-Channel MOSFET
SRFET
General Description
The AO4940 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
monolithically integrated Schottky diode in parallel with the
synchronous MOSFET to boost efficiency further.
TM
Product Summary
FET1
V
DS
(V) = 30V
I
D
= 9.1A
R
DS(ON)
< 15mΩ
R
DS(ON)
< 23mΩ
100% UIS Tested
100% Rg Tested
FET2
V
DS
(V) = 30V
I
D
=7.8A
(V
GS
= 10V)
< 21mΩ
(V
GS
= 10V)
< 32mΩ
(V
GS
= 4.5V)
SOIC-8
Top View
Bottom View
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
G2
S2/D1
S2/D1
S2/D1
D1
D2
Top View
D2
D2
G1
S1
1
2
3
4
8
7
6
5
G1
S1
G2
S2
Pin1
FET1
FET2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Max FET1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
B
Avalanche Current
B
Max FET2
10 sec
Steady-State
Symbol
V
DS
V
GS
10 sec
Steady-State
30
±20
9.1
7.6
6.1
100
17
43
2
1.3
1.4
0.9
-55 to 150
2
1.3
7.8
6.3
7.3
30
±20
6.5
5.2
64
9
12
1.4
0.9
-55 to 150
Units
V
V
A
A
A
mJ
W
°
C
T
A
=25°
C
T
A
=70°
C
I
DSM
I
DM
I
AR
E
AR
P
DSM
T
J
, T
STG
T
A
=25°
C
Repetitive avalanche energy L=0.3mH
B
Power Dissipation
A
C
T
A
=70°
Junction and Storage Temperature Range
Thermal Characteristics FET1(Intergrated Schottky Diode)
Parameter
Symbol
A
t
≤
10s
Maximum Junction-to-Ambient
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
Steady-State
R
θJL
Maximum Junction-to-Lead
C
Thermal Characteristics FET2
Parameter
Symbol
A
t
≤
10s
Maximum Junction-to-Ambient
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
Steady-State
R
θJL
Maximum Junction-to-Lead
C
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
