AO4914
Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
I
D
(A)
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
30
Normalized On-Resistance
1.6
V
GS
=10V
I
D
=8A
1.4
I
D
(A)
3V
5V
4V
3.5V
25
20
15
10
5
0
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
125°C
25°C
V
GS
=2.5V
30
V
DS
=5V
25
R
DS(ON)
(mΩ)
Ω
V
GS
=4.5V
20
1.2
15
V
GS
=10V
1
17
5
V
GS
=4.5V
2
I
D
=4A
10
10
0
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
0.8
0
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
50
50
I
D
=8A
1.0E+01
1.0E+00
125°C
40
R
DS(ON)
(mΩ)
Ω
125°C
30
40
1.0E-01
I
S
(A)
25°C
1.0E-02
1.0E-03
20
25°C
1.0E-04
FET+Schottky
10
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
4
1.0E-05
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.0
0.2
Rev 11: Mar. 2011
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