AO4914
30V Dual N-Channel MOSFET with Schottky Diode
General Description
Product Summary
Q2(N-Channel)
30V
8A (V
GS
=10V)
R
DS(ON)
<20.5m
R
DS(ON)
<28m
(V
GS
=10V)
(V
GS
=4.5V)
The AO4914 uses advanced trench technology to provide
Q1(N-Channel)
excellent R
DS(ON)
and low gate charge. The two MOSFETs V
DS
= 30V
make a compact and efficient switch and synchronous
I
D
= 8A (V
GS
=10V)
rectifier combination for use in DC-DC converters. A
R
DS(ON)
<20.5m
Schottky diode is co-packaged in parallel with the
R
DS(ON)
<28m
synchronous MOSFET to boost efficiency further.
ESD Protected
100% UIS Tested
100% R
g
Tested
ESD Protected
100% UIS Tested
100% R
g
Tested
SCHOTTKY
V
DS
= 30V, I
F
= 3A, V
F
<0.5V@1A
SOIC-8
Top View
Bottom View
Top View
S1/A
G1
S2
G2
D1/K
D1/K
D2
D2
S1
Pin1
K
G1
A
S2
G2
D1
D2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Max Q1
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Max Q2
30
±20
8
6.5
40
19
18
2
1.3
-55 to 150
Units
V
V
A
A
mJ
W
°
C
Units
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Symbol
V
DS
T
A
=25°
C
C
T
A
=70°
I
F
I
FM
P
D
T
J
, T
STG
±20
8
6.5
40
19
18
2
1.3
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Parameter
Reverse Voltage
Continuous Forward
Current
Max Schottky
30
3
2.2
20
2
1.28
-55 to 150
Pulsed Diode Forward Current
C
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
W
°
C
Junction and Storage Temperature Range
Rev 11: Mar. 2011
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
