AO4900A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
1
200
0
0
2
4
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1400
V
DS
=15V
I
D
=6.9A
Capacitance (pF)
1200
1000
800
600
400
C
rss
C
oss
C
iss
100.0
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
Power (W)
50
40
30
20
10
0
100
0.0001 0.001
0.01
0.1
1
T
J(Max)
=150°C
T
A
=25°C
I
D
(Amps)
10.0
10µs
1.0
DC
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1ms
10ms
10s
1s
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.P
D
APPLICATIONS OR USES AS CRITICAL
0.1
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
T IMPROVE PRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
on
T
Single Pulse
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
