AO4900A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
I
D
(A)
30
2.5V
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
60
1.7
50
R
DS(ON)
(mΩ)
40
30
20
V
GS
=10V
10
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Normalized On-Resistance
V
GS
=2.5V
1.5
1.3
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=4.5
V
GS
=10V
V
GS
=2.5V
V
GS
=2.5V
V
GS
=10V
V
GS
=4.5V
V
GS
=2V
10V
4.5V
3V
I
D
(A)
16
12
125°C
8
25°C
4
0
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
V
DS
=5V
20
V
GS
=4.5V
100
90
80
R
DS(ON)
(mΩ)
70
60
50
125°C
I
S
(A)
I
D
=6.9A
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
125°C
40
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1.0E-04
COMPONENTS IN 25°C SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
LIFE
30
1.0E-05
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
20
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1.0E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
