AO4816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
45
40
35
30
I
D
(A)
25
20
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
45
40
Normalized On-Resistance
35
R
DS(ON)
(m
Ω
)
30
25
20
15
10
5
0
5
10
15
20
25
30
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
V
GS
=20V
V
GS
=10V
V
GS
=4.5V
1.6
1.4
V
GS
=20V
1.2
1
1.8
I
D
=8.5A
V
GS
=3V
3.5V
10V
6V
7V
30
25
5V
I
D
(A)
20
15
10
5
0
2
2.5
3
3.5
4
4.5
5
5.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
25°C
V
DS
=5V
125°C
V
GS
=10V
60
50
R
DS(ON)
(m
Ω
)
40
30
125°C
20
10
0
0
5
10
15
20
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
I
D
=8.5A
I
S
(A)
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
