AO4816
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4816 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
dual device is suitable for use as a load switch or in
PWM applications.
Standard Product AO4816 is Pb-
free (meets ROHS & Sony 259 specifications).
AO4816L is a Green Product ordering option.
AO4816 and AO4816L are electrically identical.
Features
V
DS
(V) = 30V
I
D
= 8.5A
R
DS(ON)
< 17mΩ (V
GS
= 20V)
R
DS(ON)
< 20mΩ (V
GS
= 10V)
R
DS(ON)
< 46mΩ (V
GS
= 4.5V)
D1
S2
G2
S1
G1
D2
D2
D1
D1
D2
1
2
3
4
8
7
6
5
G1
S1
G2
S2
SOIC-8
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
T
A
=25°C
A
Current
I
D
T
A
=70°C
Pulsed Drain Current
B
I
DM
Power Dissipation
T
A
=25°C
T
A
=70°C
P
D
T
J
, T
STG
Maximum
30
±25
8.5
6.5
40
2
1.28
-55 to 150
Units
V
V
A
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
33
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.