AO4815
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-6V
-5V
-10V
20
-I
D
(A)
-I
D
(A)
-4.5V
15
125°C
20
25
V
DS
=-5V
10
10
V
GS
=-4V
5
25°C
0
0
2
3
4
-V
DS
(Volts)
Figure 1: On-Region Characteristics
1
5
0
2
2.5
3.5
4
4.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
3
5
18
Normalized On-Resistance
1.6
17
R
DS(ON)
(m
Ω
)
V
GS
=-10V
1.4
V
GS
=-10V
I
D
=-8A
16
1.2
V
GS
=-20V
I
D
=-8A
1
15
V
GS
=-20V
14
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
I
D
=-8A
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
50
1.0E-01
R
DS(ON)
(m
Ω
)
-I
S
(A)
125°C
40
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1.0E-02
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1.0E-03
125°C
30
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1.0E-04
20
25°C
10
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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