AO4815
30V Dual P-Channel MOSFET
General Description
The AO4815 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected.
Product Summary
V
DS
(V) = -30V
I
D
= -8A (V
GS
= -20V)
R
DS(ON)
< 18mΩ (V
GS
= -20V)
R
DS(ON)
< 20mΩ (V
GS
= -10V)
ESD Rating: 2KV HBM
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
D2
G1
S1
G2
S2
Pin1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°
C
Power Dissipation
A
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
Maximum
-30
±25
-8
-6.9
-40
2
1.44
-55 to 150
Units
V
V
A
W
°
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
50
73
31
Max
62.5
110
40
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
